Conference
MOSFET Modeling for Low Noise, RF Circuit Design
Abstract
In this paper, high frequency (HF) AC and noise modeling of MOSFETs for low noise, radio frequency (RF) integrated circuit (lC) design are discussed. Scalable parasitic model and the Non-Quasi-Static (NQS) model are discussed and verified with the measured data. For the noise modeling, extracted noise sources of MOSFETs in $0.18 \mu {\rm m}$ Cmos process and from RF noise measurements are presented. Finally, the design consideration including …
Authors
Deen MJ; Chen C-H; Cheng Y
Pagination
pp. 201-208
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2002
DOI
10.1109/cicc.2002.1012797
Name of conference
Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)