Modelling of bonding pads and their effect on the high-frequency-noise figure of polysilicon emitter bipolar junction transistors

This paper presents detailed experimental results on the input impedance of bonding pads, and a simple electrical model that accurately describes the impedances of these pads as a function of frequency for five different types of pad structures. It also describes the effects of the bonding pads on the minimum high-frequency-noise figure (NF MIN ) of polysilicon emitter npn bipolar junction transistors as functions of collector current density …