Conference
Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy
Abstract
The bandedge optical properties of GaAsBi films, as thick as 470nm, with Bi content varying from 0.7% Bi to 2.8% Bi grown by molecular beam epitaxy on GaAs substrates are measured by photoluminescence (PL) and photothermal deflection spectroscopy (PDS). The PDS spectra were fit with a modified Fernelius model which takes into account multiple reflections within the GaAsBi layer and GaAs substrate. Three undoped samples and two samples that are …
Authors
Beaudoin M; Lewis RB; Andrews JJ; Bahrami-Yekta V; Masnadi-Shirazi M; O’Leary SK; Tiedje T
Volume
425
Pagination
pp. 245-249
Publisher
Elsevier
Publication Date
9 2015
DOI
10.1016/j.jcrysgro.2015.01.019
Conference proceedings
Journal of Crystal Growth
ISSN
0022-0248