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Ultrashort Pulse Amplification at 1080 nm with a...
Journal article

Ultrashort Pulse Amplification at 1080 nm with a Long-Wavelength InGaAs–GaAs Flared Amplifier

Abstract

Pulses of 5 ps in duration have been amplified using a long-wavelength InGaAs–GaAs semiconductor optical amplifier containing a flared waveguide. The amplifier is seeded using short pulses emitted by a passively mode-locked semiconductor laser. Average output powers of 50 mW have been obtained at a center wavelength of 1080 nm for a drive current of 290 mA. Pulse compression yields durations as short as 520 fs and peak powers as high as 40 W. Perspectives for combining the semiconductor master oscillator power amplifier with Yb fiber amplifiers in a hybrid configuration are also briefly discussed.

Authors

Budz AJ; Haugen HK

Journal

Journal of Lightwave Technology, Vol. 25, No. 12, pp. 3766–3769

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

December 1, 2007

DOI

10.1109/jlt.2007.909356

ISSN

0733-8724

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