Conference
Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity
Abstract
In this study, using oxide breakdown voltage and time-dependent-dielectric breakdown measurements, thermal wave modulated reflectance (both mapping and imaging modes), positron annihilation spectroscopy and chemical etching/optical microscopy, we investigated:effects of D-defects upon oxide integrity,possible oxide breakdown mechanism due to D-defects, andnature of D-defects.
Authors
Park J-G; Choi S-P; Lee G-S; Jeong Y-J; Kwak Y-S; Shin C-K; Hahn S; Smith WL; Mascher P
Pagination
pp. 289-298
Publisher
Springer Nature
Publication Date
1993
DOI
10.1007/978-1-4899-1588-7_31