Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy

A study of point defects in II–VI compound semiconductors was undertaken and has revealed that open volume defects are present in a wide variety of these samples. Zn-based binary compounds contain primarily neutral divacancy defects in concentrations in the mid-1016cm−3. CdTe samples contain neutral monovacancy sized defect complexes in the high-1016cm−3 range. When a small fraction of Zn or Se is alloyed into CdTe, the defect profile changes dramatically to one dominated by divacancy sized defects at roughly half the original concentration.