The Influence of Thermal Treatment on Defect Characteristics in CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy

Positron lifetime and Doppler-broadening experiments as well as Fourier-transform infrared spectroscopy (FTIR) were performed on a variety of six-inch Czochralski (CZ) silicon wafers. Measurements were done at 14 equidistant locations across the wafers which were cut from the seed-, middle-, and tail-sections of two boules grown at different pull-speeds.In the as-grown wafers, the positron response consisted of components from small …