Raman scattering from confined acoustic phonons of silicon nanocrystals in silicon oxide matrix

In this work, silicon-rich silicon oxide films of different stoichiometry were annealed at high temperatures in order to obtain silicon nanocrystals embedded in silica. The low-frequency Raman scattering has been observed and related to acoustic phonons confined in these nanocrystals. It has been found that this scattering consists of two modes: one at a lower frequency and one at a higher frequency. The depolarization ratios for these modes were determined, showing that the lower frequency mode is depolarized and the higher frequency mode is polarized. It has been also found that under specific conditions of film preparation the product of mode frequency and nanocrystal diameter is scale invariant. Finally, it has been shown that the confined acoustic phonon frequencies do not simply depend on the nanocrystal size alone, but also on the Si concentration in the film itself. This effect has been ascribed to the accelerated nucleation and enhanced crystallization occurring in the films deposited with higher Si content.