Investigation of ion-bombardment effects on the formation of voids during deposition of a-Ge:H

In this work, positron annihilation (PA) and infra-red (IR) spectroscopies are combined to obtain information on the H bonding and the void size distribution as a function of deposition parameters (substrate temperature and ion-bombardment) during reactive ion-beam sputtering deposition (IBSD) for the growth of a-Ge:H films. For a-Ge:H films obtained at substrate temperatures between 180°C and 260°C without ion bombardment of the growth …