Incorporation of Hydrogen in SiO2 and Si3N4 Thin Films Deposited by ECR-CVD

Hydrogen incorporation in ECR-CVD silicon oxynitride films deposited using tris dimemylaminosilane (TDAS) as the silicon precursor was investigated. The as-deposited silicon dioxide films were shown to contain little hydrogen (<2%) as determined by both FTTR and nuclear reaction analysis (15N profiling). Films were obtained with high breakdown fields (>10 MV/cm) and low interface state densities (2×l011cm−2) on silicon without special surface preparation. Silicon nitride films were found to contain large hydrogen concentrations, both bonded and unbonded, which evolved …