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Studies of Defects in ZnO by Positron Annihilation
Conference

Studies of Defects in ZnO by Positron Annihilation

Abstract

In order to investigate the basic properties of radiation-induced defects in ZnO crystals, positron annihilation lifetime and Doppler-broadening measurements were performed on crystals sinterd for 18 hours at 1200 °C and irradiated with 3 MeV protons at 223 K. The irradiation induced a colour change of the specimens from the original yellowish-white to dark orange or even brown. Isochronal annealing experiments showed three annealing stages, …

Authors

Puff W; Brunner S; Mascher P; Balogh AG

Volume

378

Pagination

pp. 977-982

Publisher

Springer Nature

Publication Date

12 1995

DOI

10.1557/proc-378-977

Conference proceedings

MRS Online Proceedings Library

Issue

1

ISSN

0272-9172