Journal article
Ultrashort optical pulse generation with a mode-locked long-wavelength (1075-1085 nm) InGaAs-GaAs semiconductor laser
Abstract
Optical pulses are generated by passive and hybrid mode-locking of a long wavelength (1075-1085 nm) InGaAs-GaAs ridge waveguide laser grown by gas source molecular beam epitaxy. The devices are fabricated with two sections, one of which contains a bend in the waveguide for coupling to an external linear cavity. Pulses 2-5 ps in duration have been generated with average powers ranging from 750 μW to 1.8 mW. Pulse compression yields durations as …
Authors
Brennan MJ; Budz AJ; Robinson BJ; Mascher P; Haugen HK
Journal
IEEE Photonics Technology Letters, Vol. 16, No. 8, pp. 1798–1800
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
August 2004
DOI
10.1109/lpt.2004.831320
ISSN
1041-1135