On the effects of double-step anneal treatments on light emission from Er-doped Si-rich silicon oxide

We have studied photoluminescence (PL) from an Er-doped Si-rich Si oxide (SRSO) film thermally annealed under different conditions. Compared to the case of annealing in N2 alone, double-step annealing the film at 875°C in N2 and then at ∼850°C in O2 or vice versa increases Er PL intensities by 10%–15%; while double-step annealing in N2+5%H2 (FG) and then in O2 or vice versa yields significant enhancements of the PL from the SRSO matrix and the …