Carrier lifetimes in strained InGaAsP multiple-quantum-well laser structures

We have investigated carrier sweepout in a series of strained InGaAsP multiple quantum well laser structures by time-resolved photoconductivity and CW photoluminescence. The electrons and holes exhibit very different escape times: the electrons less than 0.5 ns and the holes greater than 10 ns. With only the built-in field across the wells, the electron escape is thermally activated in both tensile samples, while it is unclear whether tunneling …