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Semiconductor Non-Linear Absorption Coefficients Measured by Optical Pump with THz Probe

Abstract

An optical pump, THz probe method is used to determine nonlinear absorption coefficients at 800 nm and 1300 nm for the semiconductors GaAs, InP, ZnSe and ZnTe.

Authors

Tiedje HF; Haugen HK; Preston JS

Pagination

pp. 363-363

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2004

DOI

10.1109/icimw.2004.1422109

Name of conference

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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