Conference
Focused ion beam implantation-induced disordering in InGaAsP MQW heterostructures [studied by photoluminescence]
Abstract
Results of an investigation of the effects of focused ion beam (FIB) implantation-induced intermixing of an InGaAsP-based multiple quantum well (MQW) structure on the room temperature photoluminescence (PL) are presented. The technique of spatially, spectrally and polarization resolved PL was used to study the process of QWs intermixing by Si/sup +/, Be/sup +/ and B/sup +/. It was found that implantation in a narrow (about 100 nm) line leads to …
Authors
Elenkrig BB; Yang J; Cassidy DT; Bruce DM; Lakshmi B; Champion G
Pagination
pp. 612-615
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1995
DOI
10.1109/iciprm.1995.522218
Name of conference
Seventh International Conference on Indium Phosphide and Related Materials