Journal article
Effect of scattering on the longitudinal mode spectrum of 1.3 μm InGaAsP semiconductor diode lasers
Abstract
The scattering of stimulated emission within InGaAsP semiconductor diode lasers has been measured and correlated with the measured spectral output of the lasers. It is found that the spectral output of the diode lasers is strongly dependent on internal scattering. It is also found that the amount of scattering is characteristic of the laser structure. A theoretical model has been developed which demonstrates the effect of scattering on the …
Authors
Peters FH; Cassidy DT
Journal
Applied Physics Letters, Vol. 57, No. 4, pp. 330–332
Publisher
AIP Publishing
Publication Date
July 23, 1990
DOI
10.1063/1.103681
ISSN
0003-6951