Carrier distribution and its dependence on barrier thickness in InGaAsP∕InP asymmetric multiple quantum well lasers

The carrier distribution and its dependence on barrier thickness were investigated experimentally using the transition cavity length method and the temperature varying photoluminescence (PL) spectra for the mirror image asymmetric multiple quantum well structures. The carriers were found to be richer in the long wavelength wells rather than in the p-side wells, and the nonuniformity of the carrier distribution depends on the barrier thickness. …