Journal article
Quantum-well strain and thickness characterization by degree of polarization
Abstract
InGaAsP/InP single quantum wells grown by gas-source molecular-beam epitaxy have been characterized for their strain and thickness using degree of polarization (DOP) of the edge emission photoluminescence at room temperature. The DOP is a measure of the relative strengths of TE- and TM-polarized e–hh and e–lh transitions. The value of the DOP increases with a decrease in thickness of the well and as the strain varies from tension to …
Authors
Lakshmi B; Cassidy DT; Robinson BJ
Journal
Journal of Applied Physics, Vol. 79, No. 10, pp. 7640–7645
Publisher
AIP Publishing
Publication Date
May 15, 1996
DOI
10.1063/1.362427
ISSN
0021-8979