Conference
Crystallization phenomena in β-Ga2O3 investigated by positron annihilation spectroscopy and X-ray diffraction analysis
Abstract
Samples of single- and polycrystalline β-Ga2O3, undoped and doped with Tb3+ or Dy3+ were investigated by positron lifetime spectroscopy and by X-ray diffraction analysis. The positron annihilation data show that there are more large open-volume defects in the samples sintered at 800°C than in the samples sintered at higher temperatures (1200 and 1500°C). Also, intergranular precipitation of second-phase particles (crystallites) of RE3Ga5O12 is …
Authors
Ting W-Y; Kitai AH; Mascher P
Volume
91
Pagination
pp. 541-544
Publisher
Elsevier
Publication Date
April 2002
DOI
10.1016/s0921-5107(01)01069-8
Conference proceedings
Materials Science and Engineering B
ISSN
0921-5107