First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors

A critical requirement for high gain and low noise avalanche photodiodes is the single-carrier avalanche multiplication. We propose that the single-carrier avalanche multiplication can be achieved in materials with a limited width of the valence band resulting in a restriction of kinetic energy for holes while allowing electrons to participate in the multiplication cascade. This feature of the electric structure is not common to the majority of …