First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors

A critical requirement for high gain and low noise avalanche photodiodes is the single-carrier avalanche multiplication. We propose that the single-carrier avalanche multiplication can be achieved in materials with a limited width of the valence band resulting in a restriction of kinetic energy for holes while allowing electrons to participate in the multiplication cascade. This feature of the electric structure is not common to the majority of technologically relevant semiconductors, but it can be anticipated in chalcopyrite Cu(AlGa)Se2 alloys based on the presented electric structure calculations.