Experimental and theoretical electroabsorption in an InGaAsGaAs strained-layer superlattice, and the performance of a wave-guide modulator

Excitonic electroabsorption was investigated in an InGaAs–GaAs strained-layer superlattice (SLS) wave-guide structure. The structure consisted of a SLS region embedded in a 1.2 μm thick single-mode wave guide. The SLS formed the intrinsic region of a pin diode structure and contained 40 periods of 10 nm thick In 0.14 Ga 0.86 As wells alternating with 10 nm thick GaAs barrier layers. Zero-bias transmission and photocurrent spectra were recorded …