Laser and photoluminescence spectra of InGaAsGaAs strained-layer superlattices

Photoluminescence (PL) and laser emission from optically excited In x Ga 1−x As–GaAs strained-layer superlattices (SLS) grown by molecular-beam epitaxy have been examined. In low-intensity PL, a single, narrow (≈5 nm FWHM) emission peak was observed, corresponding to the n = 1 electron to heavy-hole transition. This feature, as well as a series of higher energy transitions, was also observed in absorption and photoreflectance spectra. …