X-ray absorption studies of strain in epitaxial (Si-Ge) atomic layer superlattice and alloy films

The Si 1s (K-shell) X-ray absorption spectra of a series of strained Si(x)Ge(100-x) alloy thin films and several {(Si)(m)(Ge)(n)}(p) atomic layer superlattices (ALS) grown epitaxially on Si(100) and Ge(100) substrates have been investigated using plane polarized synchrotron radiation. Polarization dependent components of the signal are attributed to anisotropic states associated with strain-induced tetragonal distortions. The sense of the …