Si K-edge and Ge K-edge X-ray absorption spectroscopy of the SiGe interface in [(Si)m(Ge)n]p atomic layer superlattices

The sensitivity of X-ray absorption near edge (XANES) spectra to the structure around the core excited atom has been explored by comparisons of the Si K-edge and Ge K-edge spectra of SiMe4, Ge(SiMe3)4, Si(GeMe3)4, Si(SiMe3)4, Ge(Me)4 an Ge2(Me)6 molecular compounds (Me = methyl); single crystal and amorphous Si; single crystal Ge; single crystal Si1−xGex alloy and [(Si)m(Ge)n]p atomic layer superlattices grown by molecular beam epitaxy. …