Conference
Electrical characterization of rf sputtered TiN thin films on IIIV semiconductors
Abstract
TiN thin films were deposited on GaAs and InP by rf reactive sputtering. Samples of TiN/GaAs and TiN/InP then were investigated by a multitude of techniques to evaluate the morphology of as-deposited and post-annealed films and to investigate contact properties such as barrier height, carrier concentration, and ideality factor. Optical emission spectroscopy was used as an in situ process control to optimize certain film properties. The results …
Authors
Pang Z; Boumerzoug M; Kruzelecky RV; Mascher P; Simmons JG; Thompson DA
Volume
70
Pagination
pp. 1076-1081
Publisher
Canadian Science Publishing
Publication Date
October 1, 1992
DOI
10.1139/p92-173
Conference proceedings
Canadian Journal of Physics
Issue
10-11
ISSN
0008-4204