Application of surface passivation techniques and an in-situ hydrogen plasma for regrowth of InP by GSMBE

To minimize defects at re-grown interfaces, in InP grown by gas source molecular beam epitaxy, surface passivation techniques were combined with an in-situ cleaning using a H-plasma. Surfaces were passivated by either a UV-ozone treatment or a monolayer of sulfur. Re-grown interfaces in Si-doped InP that had been UV-ozone and plasma cleaned contained virtually no electrically active defects (<5 /spl times/ 10/sup 10/ cm/sup -2/). Re-grown interfaces in Be-doped material that had been given the same treatment contained a defect concentration of 8 /spl times/ 10/sup 11/ cm/sup -2/. Secondary ion mass spectroscopy results material that was sulfur passivated and plasma cleaned contained an interfacial defect concentration of 8 /spl times/ 10/sup 11/ cm/sup -2/.<>