High Resistivity in N-Type InP and InGaAsP by He⁺ Ion Induced Amorphization. Conferences

abstract

• ABSTRACTChanges in the resistivity of n-type InP and InGaAsP by He+ ion implantation have been investigated at implant temperatures of 60-523K. The highest resistivities are achieved at the lowest temperatures under the conditions where the dose is sufficient to render the implanted region amorphous, as indicated by Rutherford backscattering/channeling measurements. Anneal data indicates that the high resistivities achieved via amorphization are stable to higher temperatures than when the samples remain crystalline after implantation.

authors

• Sargunas, V
• Comedi, D
• Zhao, J
• Jankowska, K
• Thompson, David Allan
• Simmons, JG

status

• published 

publication date

• 1993

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• Symposium on Materials Synthesis and Processing Using Ion Beams, at the 1993 MRS Fall Meeting  Conference

keywords

• Engineering
• Engineering, Manufacturing
• Materials Science
• Materials Science, Characterization & Testing
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1557/proc-316-117

International Standard Book Number (ISBN) 10

• 1-55899-215-4

start page

• 117

end page

• 122

volume

• 316