Conference
Refractory Metal Contacts to N-Type InP and InGaAs
Abstract
W/ Ti refractory metal ohmic contacts to η-type InP and InGaAs have been fabricated by electron-beam evaporation in an ultra-high vacuum metallization system. Excellent surface morphology was observed and good pattern transfer of the metal films was achieved with chemical etching. Ideal ohmic behavior was obtained for samples which were heavily doped either during MBE growth or via ion implantation. The lowest specific contact resistances …
Authors
Song KC; Stevanovic DV; Thompson DA; Simmons JG
Volume
326
Pagination
pp. 233-238
Publisher
Springer Nature
Publication Date
12 1993
DOI
10.1557/proc-326-233
Conference proceedings
MRS Online Proceedings Library
Issue
1
ISSN
0272-9172