Journal article
Spontaneous oscillations in the InP-InGaAsP lasing optoelectronic switch (LOES)
Abstract
We present the first comprehensive experimental and theoretical analyses of spontaneous electrical and optical oscillations that occur when the InP-InGaAsP lasing optoelectronic switch (LOES) is biased in or near the negative differential resistance region of the device characteristic. For a device with a switching voltage and current of /spl sim/7 V and 0.5 mA, respectively, electrical oscillations are observed which result in current spikes …
Authors
Swoger JH; Simmons JG; Shepherd FR; Thompson DA; Beckett D; Cleroux MN
Journal
IEEE Journal of Quantum Electronics, Vol. 31, No. 7, pp. 1308–1314
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
July 1995
DOI
10.1109/3.391096
ISSN
0018-9197