Conference
Analysis of the uniformity of the localized area epitaxy by spectrally resolved scanning photoluminescence
Abstract
In this contribution, room temperature spectrally resolved scanning photoluminescence technique with high spatial resolution (1 /spl mu/m) is introduced and applied to control the uniformity of the composition and of the thickness of quantum well (QW) structures obtained by localized area epitaxy. Furthermore, this technique is applied here to study lateral uniformity of QW InGaAs/InP heterostructures grown by localized area gas source …
Authors
Nuban MF; Krawczyk SK; Buchheit M; Blanchet RC; Nagy SC; Robinson BJ; Thompson DA; Simmons JG
Pagination
pp. 23-26
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1996
DOI
10.1109/iciprm.1996.491924
Name of conference
Proceedings of 8th International Conference on Indium Phosphide and Related Materials