Growth of ternary and quaternary compounds on non-planar InP substrates

We have previously shown how InP, InGaAs and InGaAsP deposited onto etched DFB gratings under the same conditions act differently and here we will show both how the atomic concentrations change in deposited InGaAs and InGaAsP layers with position above the grating and how the total incorporation rate changes when compared to growth on a planar substrate.