Conference
Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy
Abstract
Authors
LaPierre RR; Robinson BJ; Thompson DA
Pagination
pp. 517-520
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1996
DOI
10.1109/iciprm.1996.492297
Name of conference
Proceedings of 8th International Conference on Indium Phosphide and Related Materials