Conference
Composition variation of InGaAsP grown on (111)B faceted V-groove InP substrates by gas source molecular beam epitaxy
Abstract
The authors have grown 40 nm thick InGaAsP layers by gas source molecular beam epitaxy on V-groove etched (100) InP substrates. Transmission electron microscopy (TEM) has been used to examine defect information and layer thickness; energy dispersive X-ray analysis (EDX) has been used to measure the composition variation along the sidewalls and at the bottoms of the V-grooves. Based on the measured spatial distribution of composition, the strain …
Authors
Wang J; Thompson DA; Robinson BJ; Simmons JG
Pagination
pp. 511-514
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1996
DOI
10.1109/iciprm.1996.492295
Name of conference
Proceedings of 8th International Conference on Indium Phosphide and Related Materials