Conference
Schottky contacts to GaxIn1xP barrier enhancement layers on InP and InGaAs
Abstract
In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained Ga x In 1−x P layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a …
Authors
Pang Z; Mascher P; Simmons JG; Thompson DA
Volume
74
Pagination
pp. 104-107
Publisher
Canadian Science Publishing
Publication Date
December 1, 1996
DOI
10.1139/p96-842
Conference proceedings
Canadian Journal of Physics
Issue
12
ISSN
0008-4204