Electrical characterization of high resistivity InP and optically fast (sub-picosecond) InGaAsP grown by He-plasma-assisted epitaxy

Defects, intrinsic and extrinsic, are routinely used to tailor the electrical and optical properties of semiconductors. For example, an epitaxial technique using low growth temperatures has been used to produce As clusters in GaAs resulting in highly resistive, optically fast material with applications to picosecond switching and radiation hardening. For InP-based materials, a plasma assisted epitaxial technique has been developed at McMaster University which results in high resistivity (>10/sup 5/ /spl Omega/-cm) InP and optically fast (sub-picosecond) InGaAsP with a band-gap wavelength of 1.5 /spl mu/m. The initial electrical characterization of the plasma-generated traps responsible for the observed behaviour is presented in this submittal.