Journal article
The Effects of InP Grown by He-Plasma Assisted Epitaxy on Quantum-Well Intermixing
Abstract
He-plasma assisted InP (He*-InP) layers grown by gas source molecular beam epitaxy (GSMBE) have been employed to enhance quantum well (QW) intermixing induced by rapid thermal annealing in a 1.5-µm InGaAsP QW laser structure. Inserting a 40-nm He*-InP layer just above the active region enhances the blue-shift for anneal temperatures larger than 680 ºC, and a 42-nm additional blue-shift is obtained at 750 ºC for samples with the He*-InP layer, …
Authors
Yin T; Letal GJ; Robinson BJ; Thompson DA
Journal
IEEE Journal of Quantum Electronics, Vol. 37, No. 3, pp. 426–429
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
March 2001
DOI
10.1109/3.910453
ISSN
0018-9197