Conference
Implantation isolation in n-type InP bombarded with He+ and B+
Abstract
An extensive study has been carried out to investigate the changes in the electrical properties of n-type InP, doped in the range 2.5 × 1016–1 × 1018 cm−3, and bombarded with 55 keV He+ and 125 keV B+. The carrier concentration initially decreases with ion dose and reaches a minimum at a dose of ∼ 5 × 1013 cm−2 for He+ and 1 × 1013 cm−2 for B+ irradiation. The dose where the minimum occurs for each ion and the magnitude of the minimum carrier …
Authors
Sargunas V; Thompson DA; Simmons JG
Volume
106
Pagination
pp. 294-297
Publisher
Elsevier
Publication Date
December 1995
DOI
10.1016/0168-583x(95)00721-0
Conference proceedings
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Issue
1-4
ISSN
0168-583X