Journal article
An ultrafast all-optical asymmetric Fabry-Pérot switch based on bulk Be-doped InGaAsP grown by He-plasma-assisted epitaxy
Abstract
We demonstrated ultrafast all-optical switching, using an asymmetric Fabry-Pérot device, based on bulk Be-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy. We achieved 5 ps switching window (1/e fall time) and a peak contrast ratio of 20 dB at 1.57 μm. High contrast (> 10 dB) was maintained over ∼24 nm of bandwidth under switching energy density of 0.5 pJ/μm2, and over ∼40 nm of bandwidth when switching energy density was …
Authors
Qian L; Smith PWE; Robinson BJ; Thompson DA
Journal
Optical and Quantum Electronics, Vol. 33, No. 7-10, pp. 1055–1062
Publisher
Springer Nature
Publication Date
July 2001
DOI
10.1023/a:1017520910902
ISSN
0306-8919