An ultrafast all-optical asymmetric Fabry-Pérot switch based on bulk Be-doped InGaAsP grown by He-plasma-assisted epitaxy

We demonstrated ultrafast all-optical switching, using an asymmetric Fabry-Pérot device, based on bulk Be-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy. We achieved 5 ps switching window (1/e fall time) and a peak contrast ratio of 20 dB at 1.57 μm. High contrast (> 10 dB) was maintained over ∼24 nm of bandwidth under switching energy density of 0.5 pJ/μm2, and over ∼40 nm of bandwidth when switching energy density was increased to 1.4 pJ/μm2. The switching operation was independent of data pulse polarization, and could be potentially performed at high repetition rates.