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Effect of barrier thickness on the carrier...
Journal article

Effect of barrier thickness on the carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

Abstract

Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures were designed to study the effect of the thickness of the barriers on the distribution of carriers amongst the quantum wells by comparing the transition cavity lengths (TCL) of mirror image AMQW lasers. The TCL method provides a quantitative measure of the degree to which the uneven carrier distribution affects the net gain of wells owing to …

Authors

Hamp MJ; Cassidy DT; Robinson BJ; Zhao QC; Thompson DA

Journal

IEEE Photonics Technology Letters, Vol. 12, No. 2, pp. 134–136

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

February 1, 2000

DOI

10.1109/68.823494

ISSN

1041-1135