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Deuterium diffusion, trapping and release in...
Conference

Deuterium diffusion, trapping and release in ion-implanted beryllium

Abstract

High purity beryllium samples were loaded with deuterium by ion-implantation at 25°C or by thermal absorption in D2 gas at 300–500°C. The samples were then thermally ramped up to 800°C at rates of 2–3°C/min, and the released deuterium measured as a function of temperature using a mass spectrometer. An alternative technique used was 3HeD nuclear reaction analysis, which measures the amount of deuterium retained in the near-surface (0–1 μm). …

Authors

Macaulay-Newcombe RG; Thompson DA; Smeltzer WW

Volume

18

Pagination

pp. 419-424

Publisher

Elsevier

Publication Date

December 1991

DOI

10.1016/0920-3796(91)90158-m

Conference proceedings

Fusion Engineering and Design

ISSN

0920-3796