Conference
Photoreflectance study of changes in the QW profile of 1.55-micrometer laser structure induced by SiO2 cap layers
Abstract
Quantum well (QW) band gap modification has been carried out in 1.55 μm InGaAsP-based laser structures using a silicon dioxide cap (SiO2) and rapid thermal annealing (RTA). Migration of the semiconductor atoms across the QW interface changes the profile of QW from a square well to a rounded well. The modification of the profile causes the shift of energy levels in the QW. In consequence, a blue shift of the emission peak is observed in …
Authors
Kudrawiec R; Sęk G; Rudno-Rudziński W; Misiewicz J; Wojcik J; Robinson BJ; Thompson DA; Mascher P
Volume
101
Pagination
pp. 232-235
Publisher
Elsevier
Publication Date
8 2003
DOI
10.1016/s0921-5107(02)00669-4
Conference proceedings
Materials Science and Engineering B
Issue
1-3
ISSN
0921-5107