Conference
Aberration-corrected STEM and EELS of semiconducting nanostructures
Abstract
We review some applications of aberration–corrected electron microscopy for the detailed characterization of semiconducting nanostructures using a combination of high-angle annular dark-field scanning transmission electron microscopy and electron energy loss spectroscopy. The study of self-assembled quantum wires shows that it is possible to determine the composition of the nanostructures with better than 1 nm resolution down to the atomic …
Authors
Cui K; Vajargah SH; Woo SY; Couillard M; Lazar S; Kidman RN; Thompson DA; Botton GA
Volume
326
Publisher
IOP Publishing
Publication Date
November 9, 2011
DOI
10.1088/1742-6596/326/1/012007
Conference proceedings
Journal of Physics Conference Series
Issue
1
ISSN
1742-6588