Journal article
Influence of Facet Coating on the Dual Wavelength Operation of Asymmetric Ingaas–Gaas Quantum-Well Lasers
Abstract
A low-reflectivity SiNyOz film was deposited on one facet of asymmetric In xGa1 - xAs–GaAs quantum-well (QW) laser diodes containing three different QW compositions with the indium fractions ${x}=0.25, 0.21$, and 0.15, located, respectively, from the n-doped to p-doped sides of the device. Lasing is only observed on the two higher In-content QWs. The reduction of the reflectivity of one facet, with the other as-cleaved, leads to an increase in …
Authors
Jiang W; Thompson DA; Robinson BJ
Journal
IEEE Journal of Quantum Electronics, Vol. 41, No. 5, pp. 625–629
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
May 1, 2005
DOI
10.1109/jqe.2005.846343
ISSN
0018-9197