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Evolution of Composition Modulations In...
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Evolution of Composition Modulations In Ingaas/Ingaasp Quantum Well Structures Due to Quantum Well Intermixing

Abstract

The presence of the composition modulation affects the quality of thin films and their optical properties. This paper reports on TEM observations of compositional modulations that take place during rapid thermal annealing (RTA) in structures involving InGaAs QWs with InGaAsP barriers with identical In/Ga ratio. A similar compositional behavior was also observed by high resolution X-ray diffraction and photoluminescence measurements.

Authors

Hulko O; Thompson DA; Lee ASW; Simmons JG

Pagination

pp. 179-180

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2005

DOI

10.1109/iciprm.2005.1517450

Name of conference

International Conference on Indium Phosphide and Related Materials, 2005.
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