Solid Phase Epitaxy of Si1-xGex on Si Strained Layers

Single strained layer structures of up to 30 nm of Si1-xGex on (100) Si and capped with 30–36 nm of Si have been amorphized by implantation with 120 keV As+. The amorphized region, extending to a depth of 130 nm, has been regrown by solid phase epitaxy (SPE) at 600°C. Characterization of the regrown structure by Rutherford backscattering/channeling techniques and transmission electron microscopy indicates that for x < 0.18 the SPE process results in the recovery of strain, while for x > 0.18 there is increasing strain relaxation and a deterioration of crystal quality.