The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs Conferences

abstract

• ABSTRACTNi/Ge/Au and Ni/Ge/Pd contacts have been made on 1018 cm-3 n-type GaAs. The contacts were subjected to ion beam mixing through the metallization using 70-130 keV Se+ ions and subsequently subjected to rapid thermal annealing (RTA). These are compared with unimplanted contacts produced by RTA techniques on the same substrate. The specific contact resistance ,pc, has been measured for the two systems. In addition, the contacts have been studied using Auger depth profiling and SEM studies have been used to determine surface morphology. Values of pc ∽ 10-6 -10-7 ohm-cm2 have been measured. It is observed that ion beam mixing or the addition of a Ti overlayer (to the Ni/Ge/Au) improves the contact morphology.

authors

• Kazmi, Seemi
• Kruzelecky, Roman V
• Thompson, David Allan

status

• published 

publication date

• 1990

published in

• Materials Research Society Symposium - Proceedings  Journal

presented at event

• SYMP AT THE 1990 SPRING MEETING OF THE MATERIALS RESEARCH SOC : ADVANCED METALLIZATIONS IN MICROELECTRONICS  Conference

keywords

• Engineering
• Engineering, Electrical & Electronic
• Materials Science
• Materials Science, Multidisciplinary
• Science & Technology
• Technology

Digital Object Identifier (DOI)

• 10.1557/proc-181-351

International Standard Book Number (ISBN) 10

• 1-55899-070-4

start page

• 351

end page

• 356

volume

• 181