Journal article
GaAs Core−Shell Nanowires for Photovoltaic Applications
Abstract
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell …
Authors
Czaban JA; Thompson DA; LaPierre RR
Journal
Nano Letters, Vol. 9, No. 1, pp. 148–154
Publisher
American Chemical Society (ACS)
Publication Date
January 14, 2009
DOI
10.1021/nl802700u
ISSN
1530-6984