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Investigation of a Dielectric Modulated Dual Metal Gate Engineered SOI FinFET with High-K Dielectric for Bio-sensitivity Enhancement

Abstract

This paper presents a novel biosensor design featuring a dielectric-modulated, dual metal gate SOI FinFET with high-K dielectric materials. A nano-cavity formed under the gate between an SiO2 spacer and Hf02 high-K oxide accommodates biomolecules with various dielectric constants (K). The effects on drain current and energy band diagrams are analyzed for neutral and charged biomolecules, showing maximum sensitivity at K=12. The proposed biosensor demonstrates superior sensitivity compared to existing state-of-the-art biosensors, offering significant potential for its application in healthcare and biotechnology.

Authors

Lamba A; Chaujar R; Deen MJ

Volume

00

Pagination

pp. 31-33

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

November 20, 2024

DOI

10.1109/apmc60911.2024.10867705

Name of conference

2024 IEEE Asia-Pacific Microwave Conference (APMC)
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