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At-wavelength metrology of 13 nm lithography...
Journal article

At-wavelength metrology of 13 nm lithography imaging optics

Abstract

The development of an extreme ultraviolet (EUV) interferometer for testing EUV lithography optics operating at a wavelength of 13 nm using the U13U undulator beam line at the National Synchrotron Light Source is presented. The design and implementation of phase-measuring, lateral-shearing interferometry and a knife edge test will be described.

Authors

Tan Z; MacDowell AA; La Fontaine B; Bjorkholm JE; Tennant D; Taylor D; Himel M; Freeman RR; Waskiewicz WK; Windt DL

Journal

Review of Scientific Instruments, Vol. 66, No. 2, pp. 2241–2243

Publisher

AIP Publishing

Publication Date

February 1, 1995

DOI

10.1063/1.1145718

ISSN

0034-6748

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